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| 2N2222AU Datasheet, PDF (1/3 Pages) SEMTECH ELECTRONICS LTD. – PNP Silicon Epitaxial Planar Transistor | |||
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2N2222AU
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
Absolute Maximum Ratings (Ta = 25â)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25â
Parameter
DC Current Gain
at VCE = 10 V, IC = 0.1 mA
at VCE = 10 V, IC = 1 mA
at VCE = 10 V, IC = 10 mA
at VCE = 10 V, IC = 150 mA
at VCE = 10 V, IC = 500 mA
Collector Base Cutoff Current
at VCB = 60 V
Collector Base Breakdown Voltage
at IC = 10 µA
Collector Emitter Breakdown Voltage
at IC = 10 mA
Emitter Base Breakdown Voltage
at IE = 10 µA
Collector Emitter Saturation Voltage
at IC = 150 mA, IB = 15 mA
at IC = 500 mA, IB = 50 mA
Base Emitter Saturation Voltage
at IC = 150 mA, IB = 15 mA
at IC = 500 mA, IB = 50 mA
Gain Bandwidth Product
at IC = 20 mA, VCE = 20 V, f = 100 MHz
Collector Output Capacitance
at VCB = 10 V, f = 1 MHz
Symbol
Value
Unit
VCBO
75
V
VCEO
40
V
VEBO
6
V
IC
600
mA
Ptot
625
mW
Tj
150
â
Tstg
- 55 to + 150
â
Symbol
hFE
hFE
hFE
hFE
hFE
ICBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE(sat)
VBE(sat)
fT
Cob
Min.
35
50
75
100
40
-
75
40
6
-
-
0.6
-
250
-
Max.
-
-
-
300
-
10
-
-
-
0.3
1
1.2
2
-
8
Unit
-
-
-
-
-
nA
V
V
V
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
®
Datedï¼18/01/2016 Revï¼03
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