28S Datasheet, PDF (1/1 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

28S
NPN Silicon Epitaxial Planar Transistor
for switching and amplifier applications. Especially
suitable for AF-driver stages and low power output
stages.
The transistor is subdivided into one group,
according to its DC current gain.
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
DC Current Gain
at V_CE = 1 V, I_C = 5 mA
at V_CE = 1 V, I_C = 100 mA
at V_CE = 1 V, I_C = 800 mA
Collector Base Cutoff Current
at V_CB = 35 V
Emitter Base Cutoff Current
at V_BE = 6 V
Collector Base Breakdown Voltage
at I_C = 100 µA
Collector Emitter Breakdown Voltage
at I_C = 2 mA
Emitter Base Breakdown Voltage
at I_E = 100 µA
Collector Emitter Saturation Voltage
at I_C = 600 mA, I_B = 20 mA
Base Emitter Saturation Voltage
at I_C= 600 mA, I_B = 20 mA
Base Emitter Voltage
at I_C = 10 mA, V_CE = 1 V
Gain Bandwidth Product
at V_CE = 10 V, I_C = 50 mA
Collector Base Capacitance
at V_CB = 10 V, f = 1 MHz
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
P_tot
T_j
T_stg
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Value
Unit
40
V
20
V
6
V
1
A
1.25
A
100
mA
850
mW
150
O_C
- 55 to + 150
O_C
Symbol Min.
h_FE
h_FE
h_FE
I_CBO
I_EBO
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
V_CE(sat)
V_BE(sat)
V_BE
f_T
C_ob
45
200
40
-
-
40
20
6
-
-
-
100
-
Typ.
170
-
80
-
-
-
-
-
-
0.98
0.66
-
-
Max.
-
1000
-
100
100
-
-
-
0.55
1.2
1.0
-
9
Unit
-
-
-
nA
nA
V
V
V
V
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
®
Dated : 23/02/2016 CL Rev:01