1ST112WS Datasheet, PDF (1/3 Pages) SEMTECH ELECTRONICS LTD. – SILICON EPITAXIAL PLANAR SWITCHING DIODES

1ST112WS
SILICON EPITAXIAL PLANAR SWITCHING DIODES
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Peak Forward Current
Non-Repetitive Peak Forward Surge Current (t = 1 s)
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 200 mA
Reverse Current
at V_R = 15 V
at V_R = 35 V
Total Capacitance
at V_R = 0 V, f = 1 MHz
Reverse Recovery Time
at V_R = 6 V, I_F = 10 mA, I_rr = 0.1·I_R, R_L = 100 Ω
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
W2
Top View
Marking Code: "W2"
Simplified outline SOD-323 and symbol
Symbol
Value
Unit
V_RM
40
V
V_R
40
V
I_F(AV)
200
mA
I_FM
600
mA
I_FSM
1
A
T_j
150
O_C
T_stg
- 55 to + 150
O_C
Symbol
Max.
Unit
V_F
1.1
V
I_R
50
nA
500
C_T
4
pF
t_rr
10
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/04/2009