1SS83 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon Epitaxial Planar Diode for High Voltage Switching

1SS83
SILICON EPITAXIAL PLANAR DIODE
High Voltage Switching Diode
Features
• High reverse voltage (V_R = 250 V)
• High reliability with glass seal
Max. 0.5
Max. 1.9
Min. 27.5
Black
Cathode Band
Black
Part No.
Black
"ST" Brand
XXX
ST
Max. 3.9
Min. 27.5
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Peak Forward Current
Non-Repetitive Peak Forward Surge Current (at t = 1 s)
Power Dissipation
Junction Temperature
Storage Temperature Range
Electrical Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 100 mA
Reverse Current
at V_R = 250 V
at V_R = 300 V
Total Capacitance
at V_R = 0 V, f = 1 MHz
Reverse Recovery Time
at I_F = I_R = 30 mA, I_rr = 3 mA, R_L = 100 Ω
Glass Case DO-35
Dimensions in mm
Symbol
Value
Unit
V_RM
300
V
V_R
250
V
I_O
200
mA
I_FM
625
mA
I_FSM
1
A
P_tot
400
mW
T_J
175
O_C
T_stg
- 65 to + 175
O_C
Symbol
Typ.
Max.
Unit
V_F
-
1
V
I_R
-
0.2
µA
-
100
C_T
1.5
-
pF
t_rr
-
100
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/06/2007