1SS5004WS Datasheet, PDF (1/3 Pages) SEMTECH ELECTRONICS LTD. – SILICON EPITAXIAL PLANAR DIODE

1SS5004WS
SILICON EPITAXIAL PLANAR DIODE
High Voltage Switching Diode
Features
• Fast switching speed
• High conductance
• High reverse breakdown voltage rating
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Repetitive Peak Reverse Voltage
Reverse Voltage
Continuous Forward Current
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Surge Current (1 ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 20 mA
at I_F = 100 mA
at I_F = 200 mA
Reverse Current
at V_R = 240 V
Reverse Breakdown Voltage
at I_R = 150 µA
Total Capacitance
at V_R = 0 , f = 1 MHz
Reverse Recovery Time
at I_F = I_R = 30 mA , i_rr = 3 mA, R_L = 100 Ω
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
YM
Top View
Marking Code: "YM"
Simplified outline SOD-323 and symbol
Symbol
Value
Unit
V_RRM
400
V
V_R
350
V
I_F
225
mA
I_FRM
625
mA
I_FSM
2
A
P_d
350
mW
T_j
150
O_C
T_s
- 65 to + 150
O_C
Symbol
Min.
Max.
Unit
-
0.87
V_F
-
1
V
-
1.25
I_R
-
100
nA
V_(BR)R
400
-
V
C_T
-
5
pF
t_rr
-
100
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 15/03/2008