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| 1SS404WS Datasheet, PDF (1/3 Pages) SEMTECH ELECTRONICS LTD. – SILICON EPITAXIAL SCHOTTKY BARRIER DIODE | |||
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1SS404WS
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
Applications
⢠High speed switching
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
R9
Top View
Marking Code: "R9"
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Maximum (Peak) Reverse Voltage
Reverse Voltage
Average Forward Current
Maximum (Peak) Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
Forward Voltage
at IF = 300 mA
Reverse Current
at VR = 20 V
Total Capacitance
at f = 1 MHz
Symbol
Value
Unit
VRM
25
V
VR
20
V
IO
300
mA
IFM
700
mA
Ptot
200
mW
TJ
125
OC
Ts
- 55 to + 125
OC
Symbol
Typ.
Max.
Unit
VF
-
0.45
V
IR
-
50
µA
CT
46
-
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 01/09/2006
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