1SS373 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – DIODE (HIGH SPEED SWITCHING APPLICATION)

1SS373
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
Features
• Low forward voltage
Applications
• High speed switching
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Maximum (Peak) Reverse Voltage
Reverse Voltage
Average Forward Current
Maximum (Peak) Forward Current
Surge Forward Current (10 ms)
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
SY
Top View
Marking Code: "SY"
Simplified outline SOD-323 and symbol
Symbol
Value
Unit
V_RM
15
V
V_R
10
V
I_O
100
mA
I_FM
200
mA
I_FSM
1
A
P_tot
150
mW
T_J
125
O_C
T_opr
- 40 to + 100
O_C
T_s
- 55 to + 125
O_C
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 5 mA
at I_F = 100 mA
Reverse Current
at V_R = 10 V
Total Capacitance
at f = 1 MHz
Symbol
Max.
Unit
V_F
0.3
V
0.5
I_R
20
µA
C_T
40
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 01/09/2006