1SS370W Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – Silicon Epitaxial Planar Diode

1SS370W
Silicon Epitaxial Planar Diode
For high voltage and high speed switching applications
3
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Maximum Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Maximum Peak Forward Current
Surge Forward Current (10 ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 10 mA
at I_F = 100 mA
Reverse Current
at V_R = 50 V
at V_R = 200 V
Total Capacitance
at V_R = 0, f = 1 MHz
Reverse Recovery Time
at I_F = 10 mA
12
Marking Code: F5
Symbol
Value
Unit
V_RM
250
V
V_R
200
V
I_F
100
mA
I_FM
300
mA
I_FSM
2
A
P_D
100
mW
T_j
125
O_C
T_stg
- 55 to + 125
O_C
Symbol
Max.
Unit
V_F
1
V
V_F
1.2
I_R
0.1
µA
I_R
1
C_T
3
pF
t_rr
60
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 02/07/2006