1SS352 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)

1SS352
SILICON EPITAXIAL PLANAR DIODE
Features
• Low forward voltage
• Fast Reverse Recovery Time
• Small Total Capacitance
Application
• Ultra high speed switching
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Maximum (Peak) Reverse Voltage
Reverse Voltage
Average Forward Current
Maximum (Peak) Forward Current
Surge Forward Current (10 ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 100 mA
Reverse Current
at V_R = 30 V
at V_R = 80 V
Total Capacitance
at f = 1 MHz
Reverse Recovery Time
at I_F = 10 mA
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
W2
Top View
Marking Code: "W2"
Simplified outline SOD-323 and symbol
Symbol
Value
Unit
V_RM
85
V
V_R
80
V
I_O
100
mA
I_FM
200
mA
I_FSM
1
A
P_tot
200
mW
T_j
125
O_C
T_stg
- 55 to + 125
O_C
Symbol
Max.
Unit
V_F
1.2
V
I_R
0.1
µA
0.5
C_T
3
pF
t_rr
4
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/04/2009