1SS321 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)

1SS321
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
For low voltage high speed switching application
Features
• Low forward voltage
• Low reverse current
3
12
Marking Code: "ZC"
SOT-23 Plastic Package
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Maximum Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Maximum Peak Forward Current
Non-Repetitive Peak Forward Surge Current ( t = 10 ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V_RM
V_R
I_O
I_FM
I_FSM
P_d
T_j
T_stg
Value
12
10
50
150
1
150
125
- 55 to + 125
Unit
V
V
mA
mA
A
mW
O_C
O_C
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 50 mA
Reverse Current
at V_R = 10 V
Reverse Breakdown Voltage
at I_R = 10 µA
Total Capacitance
at V_R = 0 , f = 1 MHz
Symbol
Min.
Max.
Unit
V_F
-
1
V
I_R
-
500
nA
V_(BR)R
12
-
V
C_T
-
4.5
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 04/12/2007