1SS315 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – DIODE (UHF BAND MIXER APPLICATIONS)

1SS315
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
Applications
• UHF Band Mixer
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
ST
Top View
Marking Code: "ST"
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Peak Reverse Voltage
Forward Current
Junction Temperature
Storage Temperature Range
Electrical Characteristics at T_a = 25 ^OC
Parameter
Forward Current
at V_F = 0.5 V
Reverse Current
at V_R = 0.5 V
Total Capacitance
at V_R = 0.2 V, f = 1 MHz
Symbol
Value
Unit
V_RM
5
V
I_F
30
mA
T_J
125
O_C
T_stg
- 55 to + 125
O_C
Symbol Min. Typ. Max. Unit
I_F
30
-
-
mA
I_R
-
-
25
µA
C_T
-
0.6
-
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 01/09/2006