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| 1SS301CCW Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – SILICON EPITAXIAL PLANAR DIODE | |||
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1SS301CCW
SILICON EPITAXIAL PLANAR DIODE
Applications
⢠Ultra high speed switching
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Maximum (Peak) Reverse Voltage
Reverse Voltage
Average Forward Current
Maximum (Peak) Forward Current
Peak Forward Surge Current (tp = 10 ms)
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
Forward Voltage
at IF = 100 mA
Reverse Current
at VR = 30 V
at VR = 80 V
Total Capacitance
at VR = 0, f = 1 MHz
Reverse Recovery Time
at IF = 10 mA, VR = 6 V, Irr = 1 mA, RL = 100 â¦
3
12
Marking Code: PH
Symbol
Value
Unit
VRM
85
V
VR
80
V
IO
100
mA
IFM
300
mA
IFSM
2
A
Ptot
200
mW
TJ
125
OC
Ts
- 55 to + 125
OC
Symbol
Min.
Max.
Unit
VF
-
1.2
V
IR
-
0.1
µA
-
0.5
CT
-
3
pF
trr
-
4
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 10/10/2008
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