1SS294 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)

1SS294
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Features
• Small surface mounting type
• Low reverse current
• Low forward voltage
3
12
Marking Code: "XM"
SOT-23 Plastic Package
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Maximum Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Maximum Peak Forward Current
Power Disspation
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 100 mA
Reverse Current
at V_R = 40 V
Total Capacitance
at V_R = 0 V, f = 1 MHz
Symbol
Value
Unit
V_RM
45
V
V_R
40
V
I_O
100
mA
I_FM
300
mA
P_D
150
mW
T_j
125
O_C
T_stg
- 55 to + 125
O_C
Symbol
Max.
Unit
V_F
0.6
V
I_R
5
µA
C_T
25
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 30/01/2007