1SS270 Datasheet, PDF (1/3 Pages) Hitachi Semiconductor – Silicon Epitaxial Planar Diode for High Speed Switching

1SS270
SILICON EPITAXIAL PLANAR DIODE
Band Swithing Diode
Features
• Extremely small surface mounting type
• High reliability
Applications
• High frequency switching
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Reverse Voltage
Forward Current
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 10 mA
Reverse Current
at V_R = 25 V
Capacitance Between Terminals
at V_R = 6 V, f = 1 MHz
Forward Operating Resistance
at I_F = 2 mA, f = 100 MHz
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
K
Top View
Marking Code: "K"
Simplified outline SOD-523 and symbol
Symbol
Value
Unit
V_R
35
V
I_F
100
mA
T_J
125
O_C
T_stg
- 55 to + 125
O_C
Symbol
Max.
Unit
V_F
1
V
I_R
10
nA
C_T
1.2
pF
R_F
0.7
Ω
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/11/2006