1SS244 Datasheet, PDF (1/2 Pages) Rohm – Switching diode

1SS244
SILICON EPITAXIAL PLANAR DIODE
High voltage switching
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Peak Reverse Voltage
Reverse Voltage
Mean Rectifying Current
Peak Forward Current
Surge Current (1 s)
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 200 mA
Reverse Current
at V_R = 220 V
Capacitance between Terminals
at f = 1 MHz
Reverse Recovery Time
at I_R = 20 mA, I_F = 20 mA, R_L = 50 Ω
Max. 0.45
Max. 1.9
Min. 27.5
Black
Cathode Band
Black
Part No.
XXX ^{Max. 2.9}
Min. 27.5
Glass Case DO-34
Dimensions in mm
Symbol
Value
Unit
V_RM
250
V
V_R
220
V
I_O
200
mA
I_FM
625
mA
I_surge
1
A
P_tot
300
mW
T_j
175
O_C
T_S
- 65 to + 175
O_C
Symbol
Max.
Unit
V_F
1.5
V
I_R
10
µA
C_T
3
pF
t_rr
75
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/06/2007