1SS171 Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – SILICON EPITAXIAL PLANAR DIODE

1SS171
SILICON EPITAXIAL PLANAR DIODE
for high speed switching circuits
Features
• High switching speed
• Small terminal capacitance
• Large forward current
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Surge Current (at t = 1 s)
Junction Temperature
Storage Temperature Range
Max. 0.5
Max. 1.9
Min. 27.5
Black
Cathode Band
Black
Part No.
Black
"ST" Brand
XXX
ST
Max. 3.9
Min. 27.5
Glass Case DO-35
Dimensions in mm
Symbol
V_RRM
V_R
I_F(AV)
I_FRM
I_FSM
T_J
T_stg
Value
80
80
200
600
1
175
- 65 to + 175
Unit
V
V
mA
mA
A
O_C
O_C
Electrical Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 200 mA
Reverse Current
at V_R = 15 V
at V_R = 75 V
Terminal Capacitance
at V_R = 0 V, f = 1 MHz
Reverse Recovery Time
at I_F = 10 mA, I_rr = 0.1 I_R, R_L = 100 Ω
Symbol
Max.
Unit
V_F
1.1
V
I_R
50
nA
500
C_T
4
pF
t_rr
20
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/06/2007