1SS108 Datasheet, PDF (1/2 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Various Detector, High Speed Switching

1SS108
SILICON SCHOTTKY BARRIER DIODE
for various detector, high speed switching
Features
• Detection efficiency is very good.
• Small temperature coefficient.
• High reliability with glass seal.
Max. 0.5
Max. 1.9
Min. 27.5
Black
Cathode Band
Black
Part No.
Black
"ST" Brand
XXX
ST
Max. 3.9
Min. 27.5
Glass Case DO-35
Dimensions in mm
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Reverse Voltage
Average Forward Current
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
V_R
30
V
I_O
15
mA
T_J
125
O_C
T_stg
- 55 to + 125
O_C
Electrical Characteristics at T_a = 25 ^OC
Parameter
Symbol
Min.
Max.
Unit
Forward Current
at V_F = 1 V
I_F
3
-
mA
Reverse Current
at V_R = 10 V
I_R
-
100
µA
Capacitance
at V_R = 1 V, f = 1 MHz
C
-
3
pF
Rectifier Efficiency
at V_in = 2 Vrms, f = 40 MHz, R_L = 5 KΩ, C_L = 20 pF
η
70
-
%
ESD Capability ¹⁾
-
70
at C = 200 pF, both forward and reverse direction 1 pulse.
-
V
1) _{Failure criterion: IR ≥ 200 µA at VR = 10 V}
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/06/2007