1SS106 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode for Various Detector, High Speed Switching

1SS106
SILICON SCHOTTKY BARRIER DIODE
for various detector, high speed switching
Features
• Detection efficiency is very good.
• Small temperature coefficient.
• High reliability with glass seal.
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Reverse Voltage
Average Forward Current
Junction Temperature
Storage Temperature Range
Max. 0.5
Max. 1.9
Min. 27.5
Black
Cathode Band
Black
Part No.
Black
"ST" Brand
XXX
ST
Max. 3.9
Min. 27.5
Glass Case DO-35
Dimensions in mm
Symbol
Value
Unit
V_R
10
V
I_O
30
mA
T_J
125
O_C
T_stg
- 55 to + 125
O_C
Electrical Characteristics at T_a = 25 ^OC
Parameter
Symbol
Min.
Max.
Unit
Forward Current
at V_F = 1 V
I_F
4.5
-
mA
Reverse Current
at V_R = 6 V
I_R
-
70
µA
Capacitance
at V_R = 1 V, f = 1 MHz
C
-
1.5
pF
Rectifier Efficiency
at V_in = 2 Vrms, f = 40 MHz, R_L = 5 KΩ, C_L = 20 pF
η
70
-
%
ESD Capability ¹⁾
-
100
-
at C = 200 pF, both forward and reverse direction 1 pulse.
V
1) _{Failure criterion: IR ≥ 140 µA at VR = 6 V}
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/06/2007