1SS06AWT Datasheet, PDF (1/3 Pages) SEMTECH ELECTRONICS LTD. – SCHOTTKY BARRIER DIODE

1SS06AWT
SCHOTTKY BARRIER DIODE
Features
• Very low forward voltage
• Very low reverse current
• Ultra small SMD package
Applications
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Low power consumption applications
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Reverse Voltage
Continuous Forward Current
Repetitive Peak Forward Current t_p ≤ 1 s
Non-repetitive Peak Forward Current
(t = 8.3 ms half sinewave)
Junction Temperature
Storage Temperature
Operating Ambient Temperature
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 0.1 mA
at I_F = 1 mA
at I_F = 10 mA
at I_F = 100 mA
at I_F = 200 mA
Reverse Current
at V_R = 25 V
Diode Capacitance
at V_R = 1 V, f = 1 MHz
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
J
Top View
Marking Code: "J"
Simplified outline SOD-523 and symbol
Symbol
Value
Unit
V_R
40
V
I_F
200
mA
I_FRM
300
mA
I_FSM
1
A
T_J
150
O_C
T_s
- 65 to + 150
O_C
T_amb
- 65 to + 150
O_C
Symbol
Max.
Unit
220
290
V_F
360
mV
500
600
I_R
0.5
µA
C_D
20
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/11/2006