1N728WS Datasheet, PDF (1/3 Pages) SEMTECH ELECTRONICS LTD. – SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

1N728WS
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
For super-high speed switching and
wave detection circuit applications
PINNING
PIN
1
2
1
DESCRIPTION
Cathode
Anode
2
PP
Top View
Marking Code: "PP"
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Peak Reverse Voltage
Reverse Voltage
Forward Current
Peak Forward Current
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
V_RM
30
V
V_R
30
V
I_F
30
mA
I_FM
150
mA
T_j
125
O_C
T_s
- 55 to + 125
O_C
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 1 mA
at I_F = 30 mA
Reverse Current
at V_R = 30 V
Terminal Capacitance
at V_R = 1 V, f = 1 MHz
Reverse Recovery Time
at I_F = I_R = 10 mA, I_rr = 1 mA, R_L = 100 Ω
Detection Efficiency
at V_in = 3 V_(peak), f = 30 MHz, R_L = 3.9 KΩ, C_L = 10 pF
Symbol
Typ.
Max.
Unit
V_F
-
0.4
V
-
1
I_R
-
0.3
µA
C_T
1.5
-
pF
t_rr
1
-
ns
η
65
-
%
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 01/09/2006