1N6263WT Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – SILICON SCHOTTKY BARRIER DIODE

1N6263WT
SILICON SCHOTTKY BARRIER DIODE
for general purpose applications
PINNING
PIN
1
2
1
DESCRIPTION
Cathode
Anode
2
I
Top View
Marking Code: "I"
Simplified outline SOD-523 and symbol
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Peak Reverse Voltage
Power Dissipation
Max. Single Cycle Surge Forward Current (10 s Square
wave)
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
Reverse Breakdown Voltage
at I_R = 10 µA
Forward Voltage
at I_F = 1 mA
at I_F = 15 mA
Reverse Leakage Current
at V_R = 30 V
Junction Capacitance
at V_R = 0 V, f = 1 MHz
Reverse Recovery Time
at I_F = I_R = 5 mA, recover to 0.1 I_R
Symbol
Value
Unit
V_RRM
40
V
P_tot
400
mW
I_FSM
2
A
T_j
150
O_C
T_S
- 55 to + 150
O_C
Symbol
Min.
Max.
Unit
V_(BR)R
40
-
V
V_F
-
0.39
V
-
0.9
I_R
-
200
nA
C_tot
-
2.2
pF
t_rr
-
1
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/11/2006