1N6263WS Datasheet, PDF (1/3 Pages) SEMTECH ELECTRONICS LTD. – SILICON SCHOTTKY BARRIER DIODE

1N6263WS
SILICON SCHOTTKY BARRIER DIODE
for general purpose applications
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
S2
Top View
Marking Code: "S2"
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Symbol
Value
Unit
Peak Reverse Voltage
V_RRM
40
V
Max. Single Cycle Surge Forward Current (10 s Square wave)
I_FSM
2
A
Power Dissipation
P_tot
400 ¹⁾
mW
Junction Temperature
T_j
200
O_C
Storage Temperature Range
T_S
- 55 to + 200
O_C
1) _{Valid provided the leads direct at the case are kept at ambient temperature.}
Characteristics at T_a = 25 ^OC
Parameter
Reverse Breakdown Voltage
at I_R = 10 μA
Forward Voltage
at I_F = 1 mA
at I_F = 15 mA
Leakage Current
at V_R = 30 V
Junction Capacitance
at V_R = 0 V, f = 1 MHz
Reverse Recovery Time
at I_F = I_R = 5 mA , Recover to 0.1 I_R
Symbol Min.
Max.
Unit
V_(BR)R
40
-
V
V_F
-
0.39
V
-
0.9
I_R
-
200
nA
C_tot
-
2.2
pF
t_rr
-
1
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 01/09/2006