1N60PWS Datasheet, PDF (1/3 Pages) SEMTECH ELECTRONICS LTD. – SCHOTTKY BARRIER DIODE

1N60PWS
SCHOTTKY BARRIER DIODE
Features
• High reliability
• Low forward voltage and reverse current
Applications
• For electronic calculator, etc.
• Low current rectification and high speed switching
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Peak Reverse Voltage
Reverse Voltage
Average Rectified Output Current
Peak Forward Current
Surge Forward Current
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
Forward Current
at V_F = 1 V
Reverse Current
at V_R = 10 V
Reverse Voltage
at I_R = 100 µA
Junction Capacitance
at f = 1 MHz, V = -1 V
Rectification efficiency
at Vi = 2 Vrms, R = 5 KΩ, C = 20 pF, f = 40 MHz
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
MA
Top View
Marking Code: "MA"
Simplified outline SOD-323 and symbol
Symbol
Value
Unit
V_RM
45
V
V_R
10
V
I_O
50
mA
I_FM
150
mA
I_surge
500
mA
T_j
125
O_C
T_S
- 55 to + 125
O_C
Symbol
Min.
Max.
Unit
I_F
4
-
mA
I_R
-
50
µA
V_R
45
-
V
C_J
-
1
pF
η
55
-
%
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 01/09/2006