1N60PW Datasheet, PDF (1/3 Pages) SEMTECH ELECTRONICS LTD. – Schottky Barrier Diode

1N60PW, 1N60SW
Schottky Barrier Diode
FEATURES
• High reliability
• Low forward voltage and reverse current
APPLICATIONS
• For electronic calculator, etc.
• Low current rectification and high speed switching
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
FM
Top View
Marking Code: 1N60PW: "FM"
1N60SW: "FN"
Simplified outline SOD-123 and symbol
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Peak Reverse Voltage
Reverse Voltage
Peak Forward Current
Average Rectified Output Current
Surge Forward Current
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
V_RM
45
V
V_R
10
V
I_FM
150
mA
I_O
50
mA
I_surge
500
mA
T_j
125
O_C
T_S
-55 to +125
O_C
Characteristics (T_a = 25 ^OC)
Parameter
Symbol
Min.
Forward Current
at V_F = 1 V
I_F
4
Reverse Current
at V_R = 10 V
1N60PW
I_R
-
1N60SW
-
Reverse Voltage
at I_R = 100 µA
Junction Capacitance
at f = 1 MHz, V = -1 V
V_R
45
C_J
-
Rectification efficiency
η
55
at Vi = 2 Vrms, R = 5 KΩ, C = 20 pF, f = 40 MHz
Pair Δ I_F ≤ 6 mA at 1V, Δ I_R ≤ 20 µA at 10 V
Max.
Unit
-
mA
50
µA
100
-
V
1
pF
-
%
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/04/2006