1N5817W Datasheet, PDF (1/3 Pages) SEMTECH ELECTRONICS LTD. – 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE

1N5817W
1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features:
․ Schottky Barrier Chip
․ Guard Ring Die Construction for Transient Protection
․ Low Power Loss, High Efficiency
․ High Surge Capability
․ High Current Capability and Low Forward Voltage Drop
․ For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Application.
Mechanical Data:
Case: SOD-123, Plastic
Terminals: Solderable per MIL-STD-202, Method 208
Polarity: Cathode Band
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
A0
Top View
Marking Code: "A0"
Simplified outline SOD-123 and symbol
Absolute Maximum Ratings (T_a = 25^oC)
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage at I_R=1.0mA
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current at T_L=90℃
Power Dissipation
Non-Repetitive Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rated load (JEDEC Method)
Typical Thermal Resistance Junction to Ambient
Operating Temperature Range
Storage Temperature Range
Symbol
V_RRM
V_RWM
V_R
V_R(RMS)
I_O
P_tot
Value
20
20
20
14
1.0
450
I_FSM
25
R_θJA
222
T_j
-65 to +125
T_S
-65 to +150
Unit
V
V
V
V
A
mW
A
℃/W
℃
℃
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 24/11/2004