1N5817 Datasheet, PDF (1/2 Pages) Motorola, Inc – SCHOTTKY BARRIER RECTIFIERS 1 AMPERE 20, 30 and 40 VOLTS

1N5817 THRU 1N5819
SCHOTTKY BARRIER RECTIFIERS
Features
• Metal silicon junction, majority carrier conduction
• Guarding for overvoltage protection
• Low power loss, high efficiency
• High current capability
• low forward voltage drop
• High surge capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Mechanical Data
• Case: Molded plastic, DO-41
Dimensions in mm
Maximum Ratings and Electrical Characteristics
Ratings at 25 ^OC ambient temperature unless otherwise specified.
Parameter
Symbols
Maximum Repetitive Peak Reverse Voltage
V_RRM
Maximum RMS voltage
V_RMS
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
0.375" (9.5 mm) Lead Length at T_L = 90 ^OC
Peak Forward Surge Current, 8.3ms Single Half Sine-wave
Superimposed On Rated Load (JEDEC method) at T_L = 70 ^OC
Maximum Instantaneous Forward Voltage at 1 A
Maximum Instantaneous Forward Voltage at 3.1 A
Maximum Instantaneous Reverse Current at
Rated DC Reverse Voltage
T_A = 25 ^OC
T_A = 100 ^OC
Typical Thermal Resistance
Typical Junction Capacitance
Storage and Operating Junction Temperature Range
V_DC
I_(AV)
I_FSM
V_F
I_R
R_θJA
R_θJL
C_J
T_j ,T_stg
1N5817
20
14
20
1N5818
30
21
30
1N5819
40
28
40
1
25
0.45
0.55
0.6
0.75
0.875
0.9
1
10
50
15
110
- 65 to + 125
Units
V
V
V
A
A
V
mA
O_C/W
pF
O_C
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 11/11/2008