1N4531 Datasheet, PDF (1/1 Pages) NXP Semiconductors – High-speed diodes

1N4531, 1N4532
SILICON EPITAXIAL PLANAR DIODES
Fast Switching Diode
Max. 0.45
Max. 1.9
Min. 27.5
Black
Cathode Band
Black
Part No.
XXX ^{Max. 2.9}
Min. 27.5
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Repetitive Peak Reverse Voltage
Continuous Reverse Voltage
Continuous Forward Current
Repetitive Peak Forward Current
Non-repetitive Peak Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
at t = 1 µs
at t = 1 ms
at t = 1 s
Characteristics at T_j = 25 ^OC
Parameter
Forward Voltage
at I_F = 10 mA
Reverse Current
at V_R = 20 V
at V_R = 50 V
at V_R = 20 V, T_j = 150 ^OC
at V_R = 50 V, T_j = 150 ^OC
Diode Capacitance
at f = 1 MHz
Reverse Recovery Time
at I_F = 10 mA, I_R = 60 mA, R_L = 100 Ω
at I_F = 10 mA, I_R = 10 mA, R_L = 100 Ω
Forward Recovery Voltage
at I_F = 100 mA, t_r ≤ 30 ns
Thermal Resistance from Junction to Ambient
1N4531
1N4532
1N4531
1N4532
1N4531
1N4532
1N4531
1N4532
1N4532
Symbol
V_RRM
V_R
I_F
I_FRM
I_FSM
P_tot
T_j
T_S
Symbol
V_F
I_R
I_R
I_R
I_R
C_d
C_d
t_rr
t_rr
t_rr
V_fr
R_thJA
Glass Case DO-34
Dimensions in mm
Value
Unit
75
V
75
V
200
mA
450
mA
4
1
A
0.5
500
mW
200
O_C
- 65 to + 200
O_C
Max.
Unit
1
V
25
nA
100
nA
50
µA
100
µA
4
pF
2
pF
4
ns
2
ns
4
ns
3
V
350
K/W
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/06/2007