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| 1N4151W Datasheet, PDF (1/4 Pages) General Semiconductor – SMALL SIGNAL DIODES | |||
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1N4151W
Silicon Epitaxial Planar Small Signal Diode
Features
⢠SOD 123 package
⢠Fast switching
Absolute Maximum Ratings (Ta=25â)
Parameter
Symbol
Peak reverse voltage
VRM
Reverse voltage
VR
Average rectified current half wave
Rectification with resistive load fâ§50Hz
IO
Surge forward current t<1s Tj=25â
IFSM
Power dissipation
Ptot
Thermal resistance junction to ambient air
RthJA
Junction temperature
TJ
Storage temperature
Tstg
* Valid provided that electrodes are kept at ambient temperature.
Limits
75
50
150*
500
410*
450*
150
-65 to +150
Unit
V
V
mA
mA
mW
â/W
â
â
Electrical Characteristics (Ta=25â)
Parameter
Forward voltage
Leakage current
Symbol Min Typ Max
VF
- - 1.0
IR
- - 50
50
Reverse breakdown voltage
Capacitance
Reverse recovery time
Rectification efficiency
V(BR)R 75 -
-
Ctot
-
-
2
trr
- - 4.0
- - 2.0
ηv 0.45 - -
Unit
Conditons
V IF=50mA
nA VR=50V
µA VR=20V, TJ=150â
V Tested with 5µA pulses
pF VF=VR=0V
ns From IF=10mA through IR=10mA to IR=1mA
ns From IF=10mA to IR=1mA, VR=6V, RL=100â¦
- f=100MHz, VRF=2V
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 12/05/2005
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