1N4149 Datasheet, PDF (1/1 Pages) Microsemi Corporation – COMPUTER DIODE Switching

1N4149...1N4454
SILICON EPITAXIAL PLANAR DIODES
for general purpose and switching
Max. 0.5
Max. 1.9
Min. 27.5
Black
Cathode Band
Black
Part No.
Black
"ST" Brand
XXX
ST
Max. 3.9
Min. 27.5
Max. 0.45
Max. 1.9
Min. 27.5
Black
Cathode Band
Black
Part No.
XXX ^{Max. 2.9}
Min. 27.5
Glass Case DO-35
Dimensions in mm
Glass Case DO-34
Dimensions in mm
Absolute Maximum Ratings and Characteristics (T_a = 25 ^OC unless otherwise specified.)
Type
Peak
Reverse
Voltage
Max.
Average
Rectified
Current
Max. Power Max.
Dissipation Junction
at 25 ^OC Temp.
Max. Forward
Voltage
Max. Reverse
Current
Max. Reverse Recovery Time
V_RM (V) I_O (mA) ²⁾ P_tot (mW) ²⁾ T_j (^OC) V_F (V) at I_F (mA) I_R (nA) at V_R (V) t_rr (ns)
Conditions
1N4149 ¹⁾
100
150
1N4151
75
150
1N4152
40
150
1N4154
35
150
1N4447 ¹⁾
100
150
1N4449 ¹⁾
100
150
1N4450
40
150
1N4451
40
150
1N4453
30
150
500
200
1
10
25
20
4
I_F = 10 mA, V_R = 6 V,
R_L = 100 Ω, to I_R = 1 mA
500
200
1
50
50
50
2
I_F = 10 mA, V_R = 6 V,
R_L = 100 Ω, to I_R = 1 mA
400
175 0.55
0.1
50
30
2
I_F = 10 mA, V_R = 6 V,
R_L = 100 Ω, to I_R = 1 mA
500
200
1
30
100
25
2
I_F = 10 mA, V_R = 6V,
R_L = 100 Ω, to I_R = 1 mA
500
200
1
20
25
20
4
I_F = 10 mA, V_R = 6 V,
R_L = 100 Ω, to I_R = 1 mA
500
200
1
30
25
20
4
I_F = 10 mA, V_R = 6 V,
R_L = 100 Ω, to I_R = 1 mA
400
175 0.54
0.5
50
30
4 I_F = I_R = 10 mA , to I_R = 1 mA
400
175
0.5
0.1
50
30
10 I_F = I_R = 10 mA , to I_R = 1 mA
400
175 0.55 0.01
50
20
--
1N4454
75
150
400
175
1
10
100
50
4 I_F = I_R = 10 mA , to I_R = 1 mA
1) _{These diodes are also available in glass case DO-34. Parameter for diodes in case DO-34: Ptot = 300 mW, Tj = 175 OC}
2) _{Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.}
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 20/06/2007