1N4148M Datasheet, PDF (1/2 Pages) Semtech Corporation – SILICON EPITAXIAL PLANAR DIODE

1N4148M
SILICON EPITAXIAL PLANAR DIODE
Fast switching diode
Max. 0.45
Max. 1.9
Min. 27.5
Black
Cathode Band
Black
Part No.
XXX ^{Max. 2.9}
Min. 27.5
Glass Case DO-34
Dimensions in mm
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Symbol
Value
Unit
Reverse Voltage
V_R
50
V
Peak Reverse Voltage
V_RM
60
V
Rectified Current (Average), Half Wave Rectification with
Resist. Load at f ≥ 50 Hz
I_O
130
mA
Surge Forward Current at t < 1 s
Power Dissipation
I_FSM
500
mA
P_tot
400 ¹⁾
mW
Junction Temperature
T_j
200
O_C
Storage Temperature Range
T_S
- 65 to + 200
O_C
1) _{Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.}
Characteristics at T_j = 25 ^OC
Parameter
Forward Voltage
at I_F = 100 mA
Reverse Leakage Current
at V_R = 50 V
Reverse Breakdown Voltage
tested with 100 µA Pulses
Capacitance
at V_F = V_R = 0
Reverse Recovery Time
from I_F = 10 mA to I_R = 1 mA, V_R = 6 V, R_L = 100 Ω
Symbol
Min.
Max.
Unit
V_F
-
1.1
V
I_R
-
0.5
μA
V_(BR)R
60
-
V
C_tot
-
3
pF
t_rr
-
4
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/06/2007