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1N4148 Datasheet, PDF (1/4 Pages) NXP Semiconductors – High-speed diodes
1N4148
SILICON EPITAXIAL PLANAR DIODE
Fast Switching Diode
This diode is also available in MiniMELF case
with the type designation LL4148
Max. 0.5
Max. 1.9
Min. 27.5
Black
Cathode Band
Black
Part No.
Black
"ST" Brand
XXX
ST
Max. 3.9
Min. 27.5
Max. 0.45
Max. 1.9
Min. 27.5
Black
Cathode Band
Black
Part No.
XXX Max. 2.9
Min. 27.5
Glass Case DO-35
Dimensions in mm
Glass Case DO-34
Dimensions in mm
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Peak Reverse Voltage
VRM
100
V
Reverse Voltage
VR
75
V
Average Rectified Forward Current
IF(AV)
200
mA
Non-repetitive Peak Forward Surge Current at t = 1 s
0.5
at t = 1 ms
IFSM
1
A
at t = 1 µs
4
Power Dissipation
Ptot
500 1)
mW
Junction Temperature
Tj
200
OC
Storage Temperature Range
TS
- 65 to + 200
OC
1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 15/09/2007