1N119WS Datasheet, PDF (1/3 Pages) SEMTECH ELECTRONICS LTD. – SILICON EPITAXIAL PLANAR DIODE

1N119WS
SILICON EPITAXIAL PLANAR DIODE
APPLICATIONS
․High speed switching
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Peak Forward Current
Non-repetitive Peak Forward Current (t = 1 μs)
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 10 mA
at I_F = 100 mA
Reverse Current
at V_R = 80 V
Capacitance between Terminals
at V_R = 0 V, f = 1 MHz
Reverse Recovery Time
at V_R = 6 V, I_F = 10 mA, R_L = 50 Ω
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
W2
Top View
Marking Code: "W2"
Simplified outline SOD-323 and symbol
Symbol
Value
Unit
V_RM
85
V
V_R
80
V
I_O
100
mA
I_FM
300
mA
I_FSM
4
A
T_J
125
O_C
T_stg
- 55 to + 125
O_C
Symbol
Max.
Unit
V_F
0.8
V
1.2
I_R
0.1
µA
C_T
2
pF
t_rr
3
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 07/04/2009