1N-SS119 Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – SILICON EPITAXIAL PLANAR DIODE

1N-SS119
SILICON EPITAXIAL PLANAR DIODE
for High Speed Switching
Features
• Low capacitance
• Short reverse recovery time
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Peak Reverse Voltage
Reverse Voltage
Average Rectified Current
Peak Forward Current
Non-Repetitive Peak Forward Surge Current (t = 1 s)
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 10 mA
Reverse Current
at V_R = 30 V
Capacitance
at V_R = 1 V, f = 1 MHz
Reverse Recovery Time
at I_F = 10 mA V_R = 6 V,R_L = 50 Ω
Max. 0.45
Max. 1.9
Min. 27.5
Black
Cathode Band
Black
Part No.
XXX ^{Max. 2.9}
Min. 27.5
Glass Case DO-34
Dimensions in mm
Symbol
Value
Unit
V_RM
35
V
V_R
30
V
I_O
150
mA
I_FM
450
mA
I_FSM
1
A
P_d
250
mW
T_j
175
O_C
T_S
- 65 to + 175
O_C
Symbol
Max.
Unit
V_F
0.8
V
I_R
0.1
µA
C
3
pF
t_rr
3.5
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/06/2007