1702 Datasheet, PDF (1/1 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

1702
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications
The transistor is subdivided into five groups, L, M,
N, O and P, according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
1. Emitter 2. Base 3. Collector
TO-92 Plastic Package
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_j
T_stg
Value
30
25
5
1
600
150
- 55 to + 150
Unit
V
V
V
A
mW
O_C
O_C
Characteristics at T_a = 25 ^OC
Parameter
Symbol Min.
DC Current Gain
at V_CE = 1 V, I_C = 100 mA
Current Gain Group L h_FE
132
M h_FE
170
N
h_FE
213
O h_FE
263
P
h_FE
333
Collector Base Cutoff Current
at V_CB = 20 V
I_CBO
-
Emitter Base Cutoff Current
at V_EB = 5 V
I_EBO
-
Collector Base Breakdown Voltage
at I_C = 10 µA
V_(BR)CBO
30
Collector Emitter Breakdown Voltage
at I_C = 10 mA
V_(BR)CEO
25
Emitter Base Breakdown Voltage
at I_E = 100 µA
V_(BR)EBO
5
Collector Emitter Saturation Voltage
at I_C = 500 mA, I_B = 50 mA
V_CE(sat)
-
Gain Bandwidth Product
at V_CE = 5 V, I_C = 10 mA
f_T
-
Output Capacitance
at V_CB = 5 V, f = 1 MHz
C_ob
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
100
12
Max.
189
233
300
370
476
0.1
0.5
-
-
-
0.7
-
-
Unit
-
-
-
-
-
µA
µA
V
V
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
®
Dated : 20/08/2016 Rev: 01