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13003Z Datasheet, PDF (1/3 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor
13003Z
NPN Silicon Epitaxial Planar Transistor
for power switching applications
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
VCBO
700
V
VCEO
450
V
VEBO
9
V
IC
1.3
A
Ta = 25 OC
Tc = 25 OC
Ptot
2
50
W
Tj
150
OC
Tstg
- 55 to + 150
OC
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at VCE = 5 V, IC = 200 mA
Collector Base Cutoff Current
at VCB = 690 V
Collector Emitter Cutoff Current
at VCE = 440 V
Emitter Base Cutoff Current
at VEB = 9 V
Collector Base Breakdown Voltage
at IC = 1 mA
Collector Emitter Breakdown Voltage
at IC = 10 mA
Emitter Base Breakdown Voltage
at IE = 1 mA
Collector Emitter Saturation Voltage
at IC = 500 mA, IB = 100 mA
Base Emitter Saturation Voltage
at IC = 500 mA, IB = 100 mA
Transition Frequency
at VCE = 10 V, IC = 50 mA, f = 1 MHz
Fall Time
at IC = 0.25 A, IB1 = IB2 = 0.05 A
Storage Time
at IC = 0.25 A, IB1 = IB2 = 0.05 A
Symbol
hFE
ICBO
ICEO
IEBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE(sat)
VBE(sat)
fT
tf
ts
Min.
15
-
-
-
700
450
9
-
-
5
-
-
Max.
30
20
20
20
-
-
-
0.7
1.2
-
0.6
4.5
Unit
-
µA
µA
µA
V
V
V
V
V
MHz
µs
µs
SEMTECH ELECTRONICS LTD.
®
Dated : 22/09/2016 Rev: 01
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