13003H Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

13003H
NPN Silicon Epitaxial Planar Transistor
for high voltage and high speed switching applications
Absolute Maximum Ratings (T_a = 25℃)
Parameter
Collector Emitter Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current (f ≥ 100 Hz, Duty cycle ≤ 50 %)
Collector Current (tp < 5 ms)
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25℃
Parameter
DC Current Gain
at V_CE = 2 V, I_C = 0.5 A
at V_CE = 2 V, I_C = 1 A
Collector Emitter Cutoff Current
at V_CE = 900 V
Collector Emitter Breakdown Voltage
at I_C = 10 mA
Emitter Base Breakdown Voltage
at I_E = 10 mA
Collector Emitter Saturation Voltage
at I_C = 0.5 A, I_B = 0.1 A
at I_C = 1 A, I_B = 0.25 A
at I_C = 1.5 A, I_B = 0.5 A
Base Emitter Saturation Voltage
at I_C = 0.5 A, I_B = 0.1 A
at I_C = 1 A, I_B = 0.25 A
Rise Time
at V_CC = 125 V, I_C = 1 A, I_B = -I_B2 = 0.2 A, t_p = 25 μs
Storage Time
at V_CC = 125 V, I_C = 1 A, I_B = -I_B2 = 0.2 A, t_p = 25 μs
Fall Time
at V_CC = 125 V, I_C = 1 A, I_B = -I_B2 = 0.2 A, t_p = 25 μs
Symbol
V_CES
V_CEO
V_EBO
I_C
I_CP
P_tot
T_j
T_stg
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Value
Unit
900
V
500
V
9
V
1.5
A
3
A
1.5
W
150
℃
- 65 to + 150
℃
Symbol
h_FE
h_FE
I_CES
V_(BR)CEO
V_(BR)EBO
V_CE(sat)
V_BE(sat)
t_on
t_s
t_f
Min.
8
5
-
500
9
-
-
-
-
-
-
-
-
Max.
35
25
1
-
18
0.5
1
1.5
1
1.2
1
4
0.7
Unit
-
-
mA
V
V
V
V
µs
µs
µs
SEMTECH ELECTRONICS LTD.
®
Dated: 22/08/2016 Rev: 02 CL