13002G Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

13002G
NPN Silicon Epitaxial Planar Transistor
High voltage power transistor
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Emitter Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Peak Current
Total Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
DC Current Gain
at V_CE = 2 V, I_C = 200 mA
Collector Emitter Cutoff Current
at V_CE = 700 V
Collector Emitter Breakdown Voltage
at I_C = 10 mA
Emitter Base Breakdown Voltage
at I_E = 10 mA
Collector Emitter Saturation Voltage
at I_C = 200 mA, I_B = 40 mA
at I_C = 500 mA, I_B = 100 mA
Base Emitter Saturation Voltage
at I_C = 200 mA, I_B = 40 mA
at I_C = 500 mA, I_B = 100 mA
Rise Time
at V_CC = 60 V, I_C = 0.3 A, I_B = -I_B2 = 0.1 A, t_p = 25 μs
Storage Time
at V_CC = 60 V, I_C = 0.3 A, I_B = -I_B2 = 0.1 A, t_p = 25 μs
Fall Time
at V_CC = 60 V, I_C = 0.3 A, I_B = -I_B2 = 0.1 A, t_p = 25 μs
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Symbol
Value
Unit
V_CES
700
V
V_CEO
450
V
V_EBO
9
V
I_C
0.5
A
I_CM
1.5
A
P_tot
0.8
W
T_j
150
O_C
T_stg
- 65 to + 150
O_C
Symbol
h_FE
I_CES
V_(BR)CEO
V_(BR)EBO
V_CEsat
V_BEsat
t_r
t_s
t_f
Min.
23
-
450
9
-
-
-
-
-
-
-
Max.
35
1
-
18
0.5
1
1
1.2
0.7
2.5
0.5
Unit
-
mA
V
V
V
V
µs
µs
µs
SEMTECH ELECTRONICS LTD.
®
Dated : 22/08/2016 CL Rev: 01