13002 Datasheet, PDF (1/1 Pages) Aries Electronics, Inc. – Series 800 Vertisocket™ w/Bifurcated Contacts for Vertical Mounting

13002
NPN Silicon Epitaxial Planar Transistor
High voltage power transistor
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Current (Pulse)
Total Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
DC Current Gain
at V_CE = 10 V, I_C = 10 µA
at V_CE = 10 V, I_C = 100 mA
at V_CE = 10 V, I_C = 200 mA
Collector Base Cutoff Current
at V_CB = 700 V
Emitter Base Cutoff Current
at V_EB = 7 V
Collector Base Breakdown Voltage
at I_C = 10 mA
Collector Emitter Breakdown Voltage
at I_C = 1 mA
Emitter Base Breakdown Voltage
at I_E = 1 mA
Collector Emitter Saturation Voltage
at I_C = 100 mA, I_B = 10 mA
at I_C = 200 mA, I_B = 20 mA
Transition Frequency
at V_CE = 10 V, I_C = 100 mA
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CP
P_tot
T_j
T_stg
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Value
Unit
700
V
400
V
9
V
0.2
A
0.5
A
0.6
W
150
O_C
- 55 to + 150
O_C
Symbol
h_FE
h_FE
h_FE
I_CBO
I_EBO
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
V_CEsat
f_T
Min.
10
20
10
-
-
700
400
9
-
-
4
Max.
40
40
40
100
10
-
-
-
0.5
2.5
-
Unit
-
-
-
µA
µA
V
V
V
V
MHz
SEMTECH ELECTRONICS LTD.
®
Dated : 22/08/2016 Rev: 01