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| 13001 Datasheet, PDF (1/2 Pages) Aries Electronics, Inc. – Series 800 Vertisocket™ DIP Socket w/Bifurcated Contacts for Horizontal Mounting | |||
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13001
NPN Silicon Epitaxial Planar Transistor
for high voltage and high speed switching applications
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at VCE = 10 V, IC = 0.25 mA
at VCE = 20 V, IC = 20 mA
Collector Base Cutoff Current
at VCB = 500 V
Collector Emitter Cutoff Current
at VCE = 400 V
Emitter Base Cutoff Current
at VEB = 9 V
Collector Base Breakdown Voltage
at IC = 100 µA
Collector Emitter Breakdown Voltage
at IC = 1 mA
Emitter Base Breakdown Voltage
at IE = 100 µA
Collector Emitter Saturation Voltage
at IC = 50 mA, IB = 10 mA
Base Emitter Saturation Voltage
at IC = 50 mA, IB = 10 mA
Transition Frequency
at VCE = 20 V, IC = 20 mA, f = 1 MHz
Storage Time
at UI9600, IC = 100 mA
Fall Time
at UI9600, IC = 100 mA
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Symbol
Value
Unit
VCBO
500
V
VCEO
400
V
VEBO
9
V
IC
0.3
A
Ptot
0.75
W
Tj
150
OC
Tstg
- 55 to + 150
OC
Symbol
hFE
hFE
ICBO
ICEO
IEBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE(sat)
VBE(sat)
fT
ts
tf
Min.
5
10
-
-
-
500
400
9
-
-
8
-
-
Max.
-
40
100
200
100
-
-
-
0.5
1.2
-
3
1
Unit
-
-
µA
µA
µA
V
V
V
V
V
MHz
μs
μs
SEMTECH ELECTRONICS LTD.
®
Dated : 13/04/2016 CL Rev: 02
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