SLVE28 Datasheet, PDF (5/7 Pages) Semtech Corporation – SLVE2.8 & SLVG2.8 EPD TVS DIODES FOR ESD AND LATCH-UP PROTECTION

PROTECTION PRODUCTS
Applications Information (continued)
EPD TVS™ Characteristics
The SLV series is constructed using Semtech’s propri-
etary EPD technology. The structure of the EPD TVS is
vastly different from the traditional pn-junction devices.
At voltages below 5V, high leakage current and junction
capacitance render conventional avalanche technology
impractical for most applications. However, by utilizing
the EPD technology, the SLVE2.8 & SLVG2.8 can
effectively operate at 2.8V while maintaining excellent
electrical characteristics.
The EPD TVS employs a complex nppn structure in
contrast to the pn structure normally found in tradi-
tional silicon-avalanche TVS diodes. The EPD mecha-
nism is achieved by engineering the center region of
the device such that the reverse biased junction does
not avalanche, but will “punch-through” to a conduct-
ing state. This structure results in a device with supe-
rior dc electrical parameters at low voltages while
maintaining the capability to absorb high transient
currents.
The IV characteristic curve of the EPD device is shown
in Figure 1. The device represents a high impedance
to the circuit up to the working voltage (V_RWM). During a
transient event, the device will begin to conduct as it is
biased in the reverse direction. When the punch-
through voltage (V_PT) is exceeded, the device enters a
low impedance state, diverting the transient current
away from the protected circuit. When the device is
conducting current, it will exhibit a slight “snap-back” or
negative resistance characteristic due to its structure.
This must be considered when connecting the device
to a power supply rail. To return to a non-conducting
state, the current through the device must fall below
the snap-back current (approximately < 50mA).
SLVE2.8 & SLVG2.8
V_BRR
IPP
I _SB
I _PT
I_R
I _BRR
V_RWM V_SB V_PT V_C
EPD TVS VI Characteristic Curve
 2001 Semtech Corp.
5
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