SC1205 Datasheet, PDF (2/12 Pages) Semtech Corporation – HIGH SPEED SYNCHRONOUS POWER MOSFET DRIVER

HIGH SPEED SYNCHRONOUS POWER
MOSFET DRIVER
SC1205
PRELIMINARY - December 7, 1999
ABSOLUTE MAXIMUM RATINGS
Parameter
V_CC Supply Voltage
BST to PGND
BST to DRN
DRN to PGND
OVP_S to PGND
Input pin
Continuous Power Dissipation
Symbol
V_MAX5V
VMAX_BST-PGND
VMAX_BST-DRN
VMAX_DRN-PGN
VMAX_{OVP_S-PGND}
CO
Pd
Thermal Resistance Junction to Case
θϑΧ
Thermal Resistance Junction to
Ambient
θ_JA
Operating Temperature Range
Storage Temperature Range
Lead Temperature (Soldering) 10 sec
T_J
T_STG
T_LEAD
NOTE:
(1) Specification refers to application circuit in Figure 1.
Conditions
Tamb = 25°C, T_J = 125°C
Tcase = 25°C, T_J = 125°C
Maximum
7
30
7
25
10
-0.3 to 7.3
0.66
2.56
40
Units
V
V
V
V
V
V
W
°C/W
150
°C/W
0 to +125 °C
-65 to +150 °C
300
°C
ELECTRICAL CHARACTERISTICS (DC OPERATING SPECIFICATIONS)
Unless specified: -0 < θ_J < 125°C; V_CC = 5V; 4V < V_BST < 26V
PARAMETER
SYMBOL
CONDITIONS
MIN TYP
POWER SUPPLY
Supply Voltage
Quiescent Current, operating
Quiescent Current
V_CC
Iq_op
Iq_stby
V_CC
V_CC = 5V, CO = 0V
EN = 0V
4.15
5
1
UNDER-VOLTAGE LOCKOUT
Start Threshold
Hysteresis
Logic Active Threshold
V_START
Vhys_UVLO
V_ACT
4.2
4.4
0.05
MAX UNITS
6.0
V
ma
10
µA
4.6
V
V
1.5
V
© 1999 SEMTECH CORP.
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