1N5802US Datasheet, PDF (1/2 Pages) Microsemi Corporation – SURFACE MOUNT VOIDLESSHERMETICALLY- SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS

1N5802US/1N5804US/1N5806US
Superfast Recovery Diodes
Surface Mount (US)
POWER DISCRETES
Description
Quick reference data
V_R 50 -150 V
I 1N5802US to 1N5806US = 2.5A
F
t_rr 1N5802US to 1N5806US = 25nS
I_R 1N5802US to 1N5806US = 1µA
Features
‹ Very low reverse recovery time
‹ Hermetically sealed non-cavity construction
‹ Soft, non-snap, off recovery characteristics
‹ Very low forward voltage drop
These products are qualified to MIL-PRF-19500/477
and are preferred parts as listed in MIL-HDBK-5961.
They can be supplied fully released as JANTX and
JANTXV versions.
Electrical Specifications
Electrical specifications @ T_A = 25°C unless otherwise specified.
Symbol
1N5802US 1N5804US 1N5806US
Units
Working Reverse Voltage
Repetitive Reverse Voltage
Average Forward Current
(@ 75°C lead length = 0.375')
Repetitive Surge Current
(@ 55°C lead length = 0.375')
Non-Repetitive Surge Current
(tp = 8.3mS @ Vr & T_JMAX)
Storage Temperature Range
Average Forward Current Max
(pcb mounted: T_A = 55°C)
Sine wave
Square wave (d = 0.5)
I²t for fusing (t = 8.3mS) max
Forward Voltage Drop max
@ T_J = 25°C
Reverse Current max
@ V_WRM, T_J = 25°C
@ V_WRM, T_J = 100°C
Reverse Recovery Time max
(1.0A I_F to 1.0A I_RM recover to 0.25A I_RM(REC))
Junction Capacitance typ
@ V_R = 5V f = 1MHz
Thermal Resistance to end cap
V_RWM
V_RRM
I_F(AV)
I_FRM
I_FSM
T_STG
I_F(AV)
I_F(AV)
I²t
V_F
I_R
I_R
trr
C_J
R _θJEC
50
100
150
50
100
150
2.5
14
35
-65 to +175
1.0
1.1
10
0.875 @ 1A
1.0
50
25
25
13
V
V
A
A
A
°C
A
A²S
V
µA
nS
pF
°C/W
Revision: May 26, 2006
1
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