1N5550US Datasheet, PDF (1/4 Pages) Microsemi Corporation – VOIDLESS HERMITICALLY SEALED SURFACE MOUNT STANDARD RECOVERY GLASS RECTIFIERS

POWER DISCRETES
Description
Quick reference data
V_R = 200 - 1000V
I_{F =} 5.0A
t_rr = 2µS
V_F = 1.0V
1N5550US THRU 1N5554US
Surface Mount Hermetically Sealed
Standard Recovery Rectifier Diode
Features
Low reverse leakage current
Hermetically sealed in fused metal oxide
Good thermal shock resistance
Low forward voltage drop
Avalanche capability
These products are qualified to MIL-PRF-19500/420.
They can be supplied fully released as JAN, JANTX,
and JANTXV versions.
Absolute Maximum Ratings
Electrical specifications @ T_A = 25°C unless otherwise specified.
Symbol ^{1N5550US 1N5551US 1N5552US 1N5553US 1N5554US}
Units
Working Reverse Voltage
V_RWM
200
400
600
800
1000
V
Average Forward Current
@55 °C in free air, lead length
I_F(AV)
5.0
A
0.375"
Repetitive Surge Current
@55 °C in free air, lead length
I_FRM
25
A
0.375"
Non-Repetitive Surge Current
(tp = 8.3mS @ V_R & T_JMAX)
I_FSM
100
A
(tp = 8.3mS, @ V_R& 25 °C)
150
Storage Temperature Range
T_STG
-65 to +175
°C
Revision: August 22nd, 2011
1
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