1N5415_10 Datasheet, PDF (1/5 Pages) Semtech Corporation – Axial Leaded Hermetically Sealed Fast Rectifier Diode

POWER DISCRETES
Description
Quick reference data
V = 50 - 600V
R
I_{F =} 4.5A
t_rr = 150 - 400nS
I = 1.0µA
R
1N5415 THRU 1N5420
3SF05 THRU 3SF6
Axial Leaded Hermetically Sealed
Fast Rectifier Diode
Features
Very low reverse recovery time
Hermetically sealed in fused metal oxide
Low switching losses
Low forward voltage drop
Soft, non-snap off, recovery characteristics
These products are qualified to MIL-PRF-19500/411.
They can be supplied fully released as JAN, JANTX,
JANTXV and JANS versions.
Absolute Maximum Ratings
Electrical specifications @ T = 25°C unless otherwise specified.
A
Symbol
1N5415
3SF05
1N5416
3SF1
1N5417
3SF2
1N5418 1N5419 1N5420
3SF4 3SF5 3SF6
Units
Working Reverse Voltage
V_RWM
50
100
200
400
500
600
V
Repetitive Reverse Voltage
V_RRM
50
100
200
400
500
600
V
Average Forward Current
@ 55°C in free air, lead length
I
4.5
A
F(AV)
0.375"
Repetitive Surge Current
@ 55°C in free air, lead length
I_FRM
25
A
0.375"
Non-Repetitive Surge Current
(tp = 8.3mS @ V_R & T_JMAX)
I_FSM
80
A
(tp = 8.3mS, @ V_R & 25°C)
150
Storage Temperature Range
T_STG
-65 to +175
°C
Revision: January 11th, 2010
1
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