1N5415 Datasheet, PDF (1/5 Pages) General Semiconductor – GLASS PASSIVATED FAST SWITCHING RECTIFIER

POWER DISCRETES
Description
Quick reference data
V_R = 50 - 600V
I 4.5A
F=
t_rr = 150 - 400nS
I_R = 1.0µA
1N5415 THRU 1N5420
3SF05 THRU 3SF6
Axial Leaded Hermetically Sealed
Fast Rectifier Diode
Features
‹ Very low reverse recovery time
‹ Hermetically sealed in fused metal oxide
‹ Low switching losses
‹ Low forward voltage drop
‹ Soft, non-snap off, recovery characteristics
These products are qualified to MIL-PRF-19500/411.
They can be supplied fully released as JAN, JANTX, and
JANTXV versions.
Absolute Maximum Ratings
Electrical specifications @ T_A = 25°C unless otherwise specified.
Symbol
1N5415
3SF05
1N5416
3SF1
Working Reverse Voltage
V_RWM
50
100
Repetitive Reverse Voltage
V_RRM
50
100
Average Forward Current
@ 55°C in free air, lead length
I_F(AV)
0.375"
Repetitive Surge Current
@ 55°C in free air, lead length
I_FRM
0.375"
Non-Repetitive Surge Current
(tp = 8.3mS @ V_R & T_JMAX)
I_FSM
(tp = 8.3mS, @ V_R & 25°C)
Storage Temperature Range
T_STG
1N5417
3SF2
200
200
1N5418 1N5419 1N5420
3SF4 3SF5 3SF6
400
500
600
400
500
600
4.5
25
80
150
-65 to +175
Units
V
V
A
A
A
°C
Revision: October 4, 2007
1
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