1N4245 Datasheet, PDF (1/2 Pages) Powerex Power Semiconductors – Passivated Rectifier

POWER DISCRETES
Description
Quick reference data
V_R = 200V - 1000V
IF = 1.0A
t_rr = 2µS
V = 1.2V
F
1N4245, 1N4246, 1N4247,
1N4248, 1N4249
General Purpose Silicon Rectifiers
Features
‹ 1 Amp 55°C/no heat sink
‹ Monolithic non-cavity construction
‹ Fused metal oxide hermetic seal
‹ Superior thermal shock resistance
‹ Low thermal impedance
‹ Low reverse leakage
‹ PIV to 1000 volts
These products can be supplied as JAN, JANTX or
JANTXV per MIL-S-19500/286
Electrical Specifications
Electrical specifications: All temperatures are local ambient , 25°C unless otherwise specified.
Device
Types
Reverse
Voltage
Forward
Current
(1)
Reverse
Current (Max)
Instantaneous
Forward
Voltage
Repetitive
Surge
Current
1 Cycle
Surge
Current
tp = 8.3ms
Reverse
Recovery
Time (2)
Typical
Thermal
Impedance
(3)
V_RWM V_RRM Free Air
I_R
55°C
V_F @ I_F =
I_FRM
I_FSM
Trr
1.0Adc
UAdc
µS
θJ-L
°C/Watt
V
V
A
25°C 100°C
Vdc
A (pk)
A (pk) Max. Typ. d = 0 d = .375
1N4245 200 200
1.0
1.0 25
1.2
10
30
2
1
7
38
1N4246 400 400
1.0
1.0 25
1.2
10
30
2
1
7
38
1N4247 600 600
1.0
1.0 25
1.2
10
30
2
1
7
38
1N4248 800 800
1.0
1.0 25
1.2
10
30
2
1
7
38
1N4249 1000 1000 1.0
1.0 25
1.2
10
30
2
1
7
38
Notes:
(1) The 1.0 amp rating @ 55°C requires no heat sinking, special mounting, or forced air across the body of the
device.
(2) Recovery conditions: 0.5 Amp forward current to -1.0 Amp reverse current. Recovery time measured when
rectifier recovers to -.25 Amp.
Storage temperature: -65°C to +175°C.
Revision: May 30, 2007
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