T143-500 Datasheet, PDF (1/3 Pages) SEMPO ELECTRONIC Limited – Phase Control Thyristor

Ò143-500
Phase Control Thyristor
Type
T143-500-4
T143-500-6
T143-500-8
T143-500-10
T143-500-12
T143-500-14
T143-500-16
V , _RSM
V_DSM
500
700
900
1100
1300
1500
1700
V , _RRM
V_DRM
400
600
800
1000
1200
1400
1600
Symbol
I_TAVM
I_TRMS
I_TSM
i²t
Parameter
average on-state current
maximum RMS
on-state current
surge-current
i²t-value
(di/dt)_cr
(dv/dt)_cr
I_RRM/I_DRM
V_RRM
V_DRM
V_RSM
V_TM
r_T
V_GT
I_GT
V_GD
I_GD
I_H
I_L
critical rate of rise
of on-state current
critical rate of rise
of off-state voltage
off-state Leakage current
reverse repeat
peak value voltage
off state repeat
peak value voltage
non-repetitive
peak reverse voltage
on-state voltage
slope resistance
gate trigger voltage
gate trigger current
gate non-trigger voltage
gate non-trigger current
holding current
latching current
Test Conditions
T_C=75^OC
T_J=T_JM
T_C=25^OC; t_P=10ms
T_J=T_JM; t_P=10ms
T_C=25^OC; t_P=10ms
T_J=T_JM; t_P=10ms
T_J=T_JM; V_D=0.67·V_DRM ;
f=50 Hz; I_GM=1A;
di_G/dt=1A/µs
T_J=T_JM; V_D=0.67·V_DRM ;
gate open
T_J=T_JM; V_R=V_RRM; V_D=V_DRM
T_J=T_JM; 180^OC sine wave,
50 Hz; gate open
T_J=T_JM
T_J=T_JM; I_TM=1500A
T_J=T_JM
T_J=25^OC; V_D=12V
T_J=25^OC; V_D=12V
T_J=T_JM; V_D=0.67·V_DRM
T_J=T_JM; V_D=0.67·V_DRM
T_J=25^OC; V_D=12V; gate open
T_J=25^OC; V_D=12V;
t_G=20µs; I_GM=1A;
di_G/dt=1A/µs
Value
500
1160
12.0
10.8
720
605
100
1000
30
300-2400
300-2400
400-2500
1.80
0.57
3.50
0.25
0.50
10.0
300
700
Unit
A
A
kA
kA²Â·s
A/µs
V/µs
mA
V
V
V
V
mW
V
A
V
mA
mA
mA
SEMPO Electronics Ltd.
www.sempoel.com