STN1A60 Datasheet, PDF (3/6 Pages) SemiWell Semiconductor – Bi-Directional Triode Thyristor

Fig 1. Gate Characteristics
10¹
10⁰
10^-1
10⁰
V_GM (6V)
25 ℃
I
+
GT1
I
_
GT1
I
_
GT3
25 ℃
I
+
GT3
P_GM (1W)
P_G(AV) (0.1W)
V_GD(0.2V)
10¹
10²
10³
Gate Current [mA]
Fig 3. On State Current vs.
Maximum Power Dissipation
1.5
1.2
π ^θ 2π
θ
360°
0.9
θ : Conduction Angle
0.6
θ = 180^o
θ = 150^o
θ = 120^o
θ = 90^o
θ = 60^o
θ = 30^o
0.3
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
RMS On-State Current [A]
Fig 5. Surge On-State Current Rating
( Non-Repetitive )
12
10
8
60Hz
6
50Hz
4
2
0
10⁰
10¹
10²
Time (cycles)
STN1A60/80
Fig 2. On-State Voltage
10¹
T_J = 125 ^oC
10⁰
T_J = 25 ^oC
10^-1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
On-State Voltage [V]
Fig 4. On State Current vs.
Allowable Case Temperature
130
120
110
100
90
80
π ^θ 2π
70
θ
60
360°
θ : Conduction Angle
50
40
0.0
0.2
0.4
0.6
0.8
RMS On-State Current [A]
θ = 30^o
θ = 60^o
θ = 90^o
θ = 120^o
θ = 150^o
θ = 180^o
1.0
1.2
Fig 6. Gate Trigger Voltage vs.
Junction Temperature
10
V
+
GT1
V
_
GT1
V
+
GT3
1
V
_
GT3
0.1
-50
0
50
100
150
Junction Temperature [ ^oC]
3/6