TN815R Datasheet, PDF (1/5 Pages) List of Unclassifed Manufacturers – Silicon Controlled Rectifiers

SemiWell Semiconductor
Preliminary
TN815R
Silicon Controlled Rectifiers
Features
£ Repetitive Peak Off-State Voltage : 600V
£ R.M.S On-State Current ( I_T(RMS)= 8 A )
£ Low On-State Voltage (1.4V(Typ.)@ I_TM)
£ Non-isolated Type
General Description
Standard gate triggering SCR is suitable for the application where
requiring high bidirectional blocking voltage capability and also
suitable for over voltage protection ,motor control circuit in power
tool, inrush current limit circuit and heating control system.
Symbol
Ÿ
2. Anode
3. Gate
Ÿ
Ÿ
1. Cathode
D-PAK
2
12
3
Absolute Maximum Ratings ( T_J = 25°C unless otherwise specified )
Symbol
Parameter
Condition
V_DRM
I_T(AV)
I_T(RMS)
I_TSM
I²t
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
I²t for Fusing
Half Sine Wave : T_C = 109 °C
180° Conduction Angle
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
t = 8.3ms
di/dt
Critical rate of rise of on-state current
P_GM
P_G(AV)
I_FGM
V_RGM
T_J
T_STG
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
Ratings
600
5
8
73
26.6
50
5
1
2
5.0
- 40 ~ 125
- 40 ~ 150
Units
V
A
A
A
A²s
A/É«
W
W
A
V
°C
°C
Apr, 2004. Rev.0
1/5
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.