STR4A80 Datasheet, PDF (1/6 Pages) SemiWell Semiconductor – Bi-Directional Triode Thyristor

SemiWell Semiconductor
Bi-Directional Triode Thyristor
Features
◆ Repetitive Peak Off-State Voltage : 800V
◆ R.M.S On-State Current ( I_T(RMS)= 4 A )
◆ High Commutation dv/dt
General Description
This device is new surface mounted package line up suitable
for space limited application such as low power AC switching
applications, such as fan speed, small light controllers and
home appliance equipment.
STR4A80
Symbol
○ 2.T2
▼▲
○ 3.Gate
1.T1 ○
TO-126
3
2
1
Absolute Maximum Ratings ( T_J = 25°C unless otherwise specified )
Symbol
Parameter
Condition
V_DRM
I_T(RMS)
I_TSM
I²t
P_GM
P_G(AV)
I_GM
V_GM
T_J
T_STG
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Surge On-State Current
I²t for Fusing
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
Mass
Sine wave, 50 to 60 Hz, Gate open
T_C = 95 °C, Full Sine wave
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
tp = 10ms
T_C = 95 °C, Pulse width ≤ 1.0us
Over any 20ms period
tp = 20us, T_J=125°C
tp = 20us, T_J=125°C
Ratings
800
4.0
30/33
4.5
3
0.3
1.0
7.0
- 40 ~ 125
- 40 ~ 150
0.26
Units
V
A
A
A²s
W
W
A
V
°C
°C
g
Mar, 2008. Rev. 5
1/6
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